Zoltán György
ContactDepartment of PhysicsUniversity of Basel Klingelbergstrasse 82 CH-4056 Basel, Switzerland
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Short CV
2025-present: | Ph.D. Student in the Condensed Matter Theory & Quantum Computing Group at the University of Basel, Supervisors: Prof. J. Klinovaja and Prof. D. Loss |
2023-2025: | Master of Science in Physics, ELTE Eötvös Loránd University, Budapest |
Master’s thesis: "Validity of the g-tensor formalism of semiconductor spin qubits", Supervisor: Gábor Széchenyi, Assistant Professor | |
2020-2023: | Bachelor of Science in Physics, ELTE Eötvös Loránd University, Budapest |
Bachelor’s thesis: "Driving of spin qubits in crossbar architectures", Supervisor: Gábor Széchenyi, Assistant Professor |
Publications
Show all abstracts.1. | Limitations of the g-tensor formalism of semiconductor spin qubits |
Zoltán György, András Pályi, and Gábor Széchenyi Phys. Rev. B; arXiv:2504.05749
The g-tensor formalism is a powerful method for describing the electrical
driving of semiconductor spin qubits. However, up to now, this technique has
only been applied to the simplest qubit dynamics, resonant monochromatic
driving by a single gate. Here we study the description of (i) monochromatic
driving using two driving gates and bichromatic driving via (ii) one or (iii)
two gates. Assuming a general Hamiltonian with qubit states well separated from
excited orbital states, we find that when (i) two driving gates are used for
monochromatic driving or (ii) a single one for bichromatic, the $g$-tensor
formalism successfully captures the leading-order dynamics. We express the Rabi
frequency and the Bloch-Siegert shift using the $g$-tensor and its first and
second derivatives with respect to the gate voltage. However, when (iii)
bichromatic driving is realized using two distinct driving gates, we see a
breakdown of $g$-tensor formalism: the Rabi frequency cannot be expressed using
the $g$-tensor and its derivatives. We find that beyond the $g$-tensor and its
derivatives, three additional parameters are needed to capture the dynamics. We
demonstrate our general results by assuming an electron (hole) confined in a
circular quantum dot, subjected to Rashba spin-orbit interaction.
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2. | Bichromatic Rabi Control of Semiconductor Qubits |
Valentin John, Francesco Borsoi, Zoltán György, Chien-An Wang, Gábor Széchenyi, Floor van Riggelen, William I. L. Lawrie, Nico W. Hendrickx, Amir Sammak, Giordano Scappucci, András Pályi, and Menno Veldhorst Phys. Rev. Lett.; arXiv:2308.01720
Electrically driven spin resonance is a powerful technique for controlling
semiconductor spin qubits. However, it faces challenges in qubit addressability
and off-resonance driving in larger systems. We demonstrate coherent
bichromatic Rabi control of quantum dot hole spin qubits, offering a spatially
selective approach for large qubit arrays. By applying simultaneous microwave
bursts to different gate electrodes, we observe multichromatic resonance lines
and resonance anticrossings that are caused by the ac Stark shift. Our
theoretical framework aligns with experimental data, highlighting interdot
motion as the dominant mechanism for bichromatic driving.
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3. | Electrically driven spin resonance with bichromatic driving |
Zoltán György, András Pályi, and Gábor Széchenyi Phys. Rev. B; arXiv:2206.00399
Electrically driven spin resonance (EDSR) is an established tool for
controlling semiconductor spin qubits. Here, we theoretically study a
frequency-mixing variant of EDSR, where two driving tones with different drive
frequencies are applied, and the resonance condition connects the spin Larmor
frequency with the sum of the two drive frequencies. Focusing on flopping-mode
operation, we calculate the parameter dependence of the Rabi frequency and the
Bloch-Siegert shift. A shared-control spin qubit architecture could benefit
from this bichromatic EDSR scheme, as it enables simultaneous single-qubit
gates.
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