Zoltán György

Contact

Department of Physics
University of Basel
Klingelbergstrasse 82
CH-4056 Basel, Switzerland
office:4.9

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Short CV

2025-present: Ph.D. Student in the Condensed Matter Theory & Quantum Computing Group at the University of Basel, Supervisors: Prof. J. Klinovaja and Prof. D. Loss
2023-2025: Master of Science in Physics, ELTE Eötvös Loránd University, Budapest
Master’s thesis: "Validity of the g-tensor formalism of semiconductor spin qubits", Supervisor: Gábor Széchenyi, Assistant Professor
2020-2023: Bachelor of Science in Physics, ELTE Eötvös Loránd University, Budapest
Bachelor’s thesis: "Driving of spin qubits in crossbar architectures", Supervisor: Gábor Széchenyi, Assistant Professor



Publications

Show all abstracts.

1.  Limitations of the g-tensor formalism of semiconductor spin qubits
Zoltán György, András Pályi, and Gábor Széchenyi
Phys. Rev. B; arXiv:2504.05749

The g-tensor formalism is a powerful method for describing the electrical driving of semiconductor spin qubits. However, up to now, this technique has only been applied to the simplest qubit dynamics, resonant monochromatic driving by a single gate. Here we study the description of (i) monochromatic driving using two driving gates and bichromatic driving via (ii) one or (iii) two gates. Assuming a general Hamiltonian with qubit states well separated from excited orbital states, we find that when (i) two driving gates are used for monochromatic driving or (ii) a single one for bichromatic, the $g$-tensor formalism successfully captures the leading-order dynamics. We express the Rabi frequency and the Bloch-Siegert shift using the $g$-tensor and its first and second derivatives with respect to the gate voltage. However, when (iii) bichromatic driving is realized using two distinct driving gates, we see a breakdown of $g$-tensor formalism: the Rabi frequency cannot be expressed using the $g$-tensor and its derivatives. We find that beyond the $g$-tensor and its derivatives, three additional parameters are needed to capture the dynamics. We demonstrate our general results by assuming an electron (hole) confined in a circular quantum dot, subjected to Rashba spin-orbit interaction.

2.  Bichromatic Rabi Control of Semiconductor Qubits
Valentin John, Francesco Borsoi, Zoltán György, Chien-An Wang, Gábor Széchenyi, Floor van Riggelen, William I. L. Lawrie, Nico W. Hendrickx, Amir Sammak, Giordano Scappucci, András Pályi, and Menno Veldhorst
Phys. Rev. Lett.; arXiv:2308.01720

Electrically driven spin resonance is a powerful technique for controlling semiconductor spin qubits. However, it faces challenges in qubit addressability and off-resonance driving in larger systems. We demonstrate coherent bichromatic Rabi control of quantum dot hole spin qubits, offering a spatially selective approach for large qubit arrays. By applying simultaneous microwave bursts to different gate electrodes, we observe multichromatic resonance lines and resonance anticrossings that are caused by the ac Stark shift. Our theoretical framework aligns with experimental data, highlighting interdot motion as the dominant mechanism for bichromatic driving.

3.  Electrically driven spin resonance with bichromatic driving
Zoltán György, András Pályi, and Gábor Széchenyi
Phys. Rev. B; arXiv:2206.00399

Electrically driven spin resonance (EDSR) is an established tool for controlling semiconductor spin qubits. Here, we theoretically study a frequency-mixing variant of EDSR, where two driving tones with different drive frequencies are applied, and the resonance condition connects the spin Larmor frequency with the sum of the two drive frequencies. Focusing on flopping-mode operation, we calculate the parameter dependence of the Rabi frequency and the Bloch-Siegert shift. A shared-control spin qubit architecture could benefit from this bichromatic EDSR scheme, as it enables simultaneous single-qubit gates.